MKS RPS AX7695 等離子源

規(guī)格:

類型AX7695 集成遠程等離子源
點火氣體供應100% O2 或 Ar，或 90% O2/10% N2（聯(lián)系 MKS 以使用其他氣體點火）
工藝氣體供應高達 6.0 slm 的 100% O2 或 90% O2/10% N2（聯(lián)系 MKS 以使用其他氣體點火）
運營壓力點火：0.5 到 2.0 Torr @ 1.0 到 6.0 slm（在 R*evolution III 出口處測量的壓力）
過程：0.5 到 2.0 Torr @ 1.0 到 6.0 slm輸出就緒，交流線路，等離子開啟，電源監(jiān)視器,輸入等離子開/關，電源組占空比100%
聯(lián)鎖內部熱敏開關和內部水流開關可防止冷卻不足
接液材料6061-T6 鋁、Kalrez®、SiO2、316L SS、鎳、氟硅樹脂
控制接口離散量 I/O、9 和 25 針 D 連接器、RS-232、DeviceNet? 和以太網(wǎng)（支持 MKS TOOLweb®）
電源要求180 至 228 VAC，50/60 Hz，30A，3 相冷卻水1.75 加侖/分鐘，< 30°C

RPS AX7695集成遠程等離子體源，在未來幾年內性能有所提高早期的模型提供了性能、最清潔的活性氣體源半導體晶圓加工所需。新成立的偏遠地區(qū)家庭中的第一個專門為“晶圓上”應用而設計的等離子體源，創(chuàng)新的R*evolutionIII結合了MKS經(jīng)現(xiàn)場驗證的專利低場環(huán)形等離子體技術和堅固的等離子噴涂器設計，可產生超清潔的中性原子或自由基。原子自由基在許多過程中都是必不可少的，比如去除光刻膠、晶圓預清潔、薄膜氮化和氧化。部首通常是通過生成等離子體；然而，相關的帶電粒子有時是不可取的。避免這些副作用，血漿是遠程產生的，自由基是有效的運輸至工藝室。

RPS AX7695反應氣體發(fā)生器集成了石英真空室、RF電源和所有必要的控制裝置集成在一個緊湊、獨立的單元中，方便直接安裝在工具的工藝室上。結果是一個非常干凈的來源使原子自由基在晶圓上產生所需的反應，在一個大大降低的水平復雜性。RPS AX7695遠程等離子可提供高達6千瓦的等離子電源源向工藝提供大量自由基（高達6 slm），導致剝離或蝕刻速度是傳統(tǒng)微波系統(tǒng)的兩倍。因為它的R*evolution III遠程等離子體源效率高、成本低，大大降低了成本總體投資和工具運營成本。此外，它的體積更小，設計簡單方便用戶安裝、操作和維護。

RPS AX7695 integrated remote plasma source, with improved capability over the earlier model, provides the highest perbing and cleanest source of reactive gas species required in the processing of semiconductor wafers. The first in a new family of remote plasma sources specifically designed for “on-wafer” applications, the innovative R*evolution III combines MKS’s field-proven, patented Low-Field Toroidal plasma technology with a robust plasma applicator design that produces ultra clean atomic neutrals or radicals.

Atomic radicals are essential in many processes, such as photo-resist removal, wafer pre-clean, and thin film nitridation and oxidation. Radicals are typically created by generating a plasma; however, the associated charged particles are sometimes undesirable. To avoid these adverse effects, the plasma is generated remoby and the radicals are efficiently transported to the process chamber.The R*evolution III reactive gas generator integrates a quartz vacuum chamber, an RF power supply and all necessary controls into a compact, self-contained unit for easy installation directly on the tool’s process chamber. The result is an extremely clean source of atomic radicals to bring about the desired reb on the wafer, at a greatly reduced level of complexity. Delivering up to 6 kW of plasma power, the RPS AX7695 remote plasma source provides high flows of radicals to the process (up to 6 slm), resulting in strip or etch rates that are twice as fast as those of conventional microwave systems. Because of its efficiency and lower cost, the R*evolution III remote plasma source significantly reduces overall investment and tool operating costs. Additionally, its smaller size and design simplicity benefits the user with ease of installation, operation and maintenance.

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